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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION With TO-126 package Complement to type 2SD1506 Low collector saturation voltage APPLICATIONS For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Collector-base voltage SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -60 -50 -5 -3 -4.5 UNIT V V V A A W ae ae Open collector TC=25ae 10 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SB1065 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -50 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=-50|I IE=-50|I A ,IE=0 A ,IC=0 -60 V Emitter-base breakdown voltage -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 |I A IEBO Emitter cut-off current hFE COB DC current gain Output capacitance ANG CH Q 120-270 R VEB=-4V; IC=0 -1.0 |I A IC=-0.5A ; VCE=-3V IE=0 ; VCB=-10V,f=1MHz 56 fT Transition frequency hFE Classifications N 56-120 P IN EMIC ES IC=-0.5A ; VCE=-5V OND TOR UC 390 50 70 pF MHz 82-180 180-390 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1065 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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